GaAsing up cellphones.
A group of researchers from the Texas-based company, Freescale Semiconductor Inc., has fabricated metal oxide semiconductor field-effect transistors (MOSFET) using gallium arsenide and a novel gate dielectric. If the group can overcome some significant manufacturing challenges, this innovation could...
| Udgivet i: | IEEE spectrum 43, 5 (2006). |
|---|---|
| Hovedforfatter: | |
| Format: | Article |
| Sprog: | English |
| Fag: |