GaAsing up cellphones.

A group of researchers from the Texas-based company, Freescale Semiconductor Inc., has fabricated metal oxide semiconductor field-effect transistors (MOSFET) using gallium arsenide and a novel gate dielectric. If the group can overcome some significant manufacturing challenges, this innovation could...

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Bibliographic Details
Published in:IEEE spectrum 43, 5 (2006).
Main Author: Goldstein, H.
Format: Article
Language:English
Subjects: