GaAsing up cellphones.

A group of researchers from the Texas-based company, Freescale Semiconductor Inc., has fabricated metal oxide semiconductor field-effect transistors (MOSFET) using gallium arsenide and a novel gate dielectric. If the group can overcome some significant manufacturing challenges, this innovation could...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής

Τόπος έκδοσης:	IEEE spectrum 43, 5 (2006).
Κύριος συγγραφέας:	Goldstein, H.
Μορφή:	Άρθρο
Γλώσσα:	English
Θέματα:	Freescale Semiconductor Inc. MOSFET. Analog-to-digital conversion. Cellphone-on-a-chip. Gallium arsenide. Gate dielectric. Metal oxide semiconductor field-effect transistors. Multimedia handsets.