GaAsing up cellphones.
A group of researchers from the Texas-based company, Freescale Semiconductor Inc., has fabricated metal oxide semiconductor field-effect transistors (MOSFET) using gallium arsenide and a novel gate dielectric. If the group can overcome some significant manufacturing challenges, this innovation could...
| Publicado en: | IEEE spectrum 43, 5 (2006). |
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| Autor Principal: | |
| Formato: | Artigo |
| Idioma: | English |
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