A 0.1-μm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation.
A 256-Mb phase-change random access memory has been developed, featuring 66-MHz synchronous burst-read operation. Using a charge pump system, write performance was characterized at a low supply voltage of 1.8 V. Measured initial read access time and burst-read access time are 62 and 10 ns, respectiv...
| Vydáno v: | IEEE Journal of solid state circuits 42, 1 (2007). |
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| Hlavní autor: | |
| Médium: | Článek |
| Jazyk: | angličtina |
| Témata: |