A 0.1-μm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation.

A 0.1-μm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation.

A 256-Mb phase-change random access memory has been developed, featuring 66-MHz synchronous burst-read operation. Using a charge pump system, write performance was characterized at a low supply voltage of 1.8 V. Measured initial read access time and burst-read access time are 62 and 10 ns, respectiv...

Täydet tiedot

Bibliografiset tiedot
Julkaisussa:IEEE Journal of solid state circuits 42, 1 (2007).
Päätekijä: Kang, S.
Aineistotyyppi: Artikkeli
Kieli:English
Aiheet:
0.1 micron.
0.5 Mbit/s.
1.8 V.
10 ns.
2.67 Mbits/s.
256 MBytes.
62 ns.
66 MHz.
99 C.
PRAM.
Charge pump system.
Phase-change random access memory.
Synchronous burst-read operation.