A 90-nm CMOS Low-Power GSM

A 90-nm CMOS Low-Power GSM

To meet the widely varying speed and power requirements of multifunctional mobile devices, an appropriate combination of technology features, circuit-level low-power techniques, and system architecture is implemented in a GSM/Edge baseband processor with multimedia and mixed-signal extensions. Power...

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Bibliographic Details
Published in:IEEE Journal of solid state circuits 42, 1 (2007).
Main Author: Lueftner, T.
Format: Article
Language:English
Subjects:
1.4 V.
2.2 nm.
380 MHz.
90 nm.
ARM926 core.
GSM/Edge multimedia-enhanced baseband processor.
Dual-gate oxide core devices.
Frequency scaling.
Large SRAM blocks.
Leakage currents.
Low power CMOS technology.
Mixed-signal extensions.
Multifunctional mobile devices.
Multimedia extensions.
nFET sleep transistors.
Standby mode.
Triple-well option.