Managing subthreshold leakage in charge-based analog circuits with low-VTH transistors by analog T- switch (AT-switch) and super cut-off CMOS (SCCMOS).

The analog T-switch (AT-switch) scheme is introduced to suppress subthreshold-leakage problems in charge-based analog circuits such as switched capacitors and sample-and-hold circuits. A 0.5-V sigma-delta modulator is manufactured in a 0.15-μm FD-SOI process with low VTH of 0.1 V using the concept....

Täydet tiedot

Bibliografiset tiedot
Julkaisussa:	IEEE Journal of solid state circuits 41, 4 (2006).
Päätekijä:	Ishida, K.
Aineistotyyppi:	Artikkeli
Kieli:	English
Aiheet:	0.1 V. 0.15 micron. 0.5 V. AT-switch. FD-SOI process. SCCMOS. Analog T-switch. Charge-based analog circuits. Leakage-suppression scheme. Low threshold voltage transistors. Nonlinear leakage effects. Sigma-delta modulator. Subthreshold leakage. Subthreshold-leakage problems. Super cut-off CMOS.