A low leakage SRAM macro with replica cell biasing scheme.

A low leakage SRAM macro with replica cell biasing scheme.

For mobile applications of SRAMs, there is a need to reduce standby current leakages while keeping memory cell data. For this purpose, we propose a replica cell biasing scheme which controls the cell bias voltage by self-tuning using replica cells. This scheme minimizes the cell leakage regardless o...

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Podrobná bibliografie
Vydáno v:IEEE Journal of solid state circuits 41, 4 (2006).
Hlavní autor: Takeyama, Y.
Médium: Článek
Jazyk:English
Témata:
512 kbit.
90 nm.
Cell bias voltage control.
Cell leakage.
Diode clamp scheme.
Leakage reduction.
Low leakage SRAM macro.
Peripheral circuits.
Replica cell biasing scheme.
Row decoder circuits.
Standby current leakages.