A low leakage SRAM macro with replica cell biasing scheme.
For mobile applications of SRAMs, there is a need to reduce standby current leakages while keeping memory cell data. For this purpose, we propose a replica cell biasing scheme which controls the cell bias voltage by self-tuning using replica cells. This scheme minimizes the cell leakage regardless o...
| Publicat a: | IEEE Journal of solid state circuits 41, 4 (2006). |
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| Autor principal: | |
| Format: | Article |
| Idioma: | English |
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