A 10-b 150-MSample/s 1.8-V 123-mW CMOS A

This work describes a 10-b 150-MSample/s 4-b-per-stage single-channel CMOS pipelined ADC incorporating improved gate-bootstrapping techniques for a wideband SHA and temperature- and supply-insensitive CMOS references. The proposed ADC is designed and fabricated in a 0.18-μm one-poly six-metal CMOS t...

Täydet tiedot

Bibliografiset tiedot
Julkaisussa:	IEEE Journal of solid state circuits 39, 8 (2004).
Päätekijä:	Jong-Bum Park
Aineistotyyppi:	Artikkeli
Kieli:	englanti
Aiheet:	0.18 micron. 1.8 V. 10 bit. 123 mW. 400 MHz. CMOS A/D converter. Nyquist frequency. Analog-to-digital converters. Differential nonlinearities. Gate-bootstrapping techniques. Input bandwidth. Input frequencies. Integral nonlinearities. One-poly six-metal CMOS technology. Pipelined ADC. Signal-to-noise-and-distortion ratio. Single-channel ADC. Supply-insensitive CMOS references. Temperature-insensitive CMOS references. Wideband SHA.