High-power monolithic AlGaN
A monolithic X-band oscillator based on an AlGaN/GaN high electron mobility transistor (HEMT) has been designed, fabricated, and characterized. A common-gate HEMT with 1.5 mm of gate width in conjunction with inductive feedback is used to generate negative resistance. A high Q resonator is implement...
| izdano v: | IEEE Journal of solid state circuits 38, 9 (2003). |
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| Format: | Article |
| Jezik: | angleščina |
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