G-band (140-220-GHz) InP-based HBT amplifiers.

We report tuned amplifiers designed for the 140-220-GHz frequency band. The amplifiers were designed in a transferred-substrate InP-based heterojunction bipolar transistor technology that enables efficient scaling of the parasitic collector-base junction capacitance. A single-stage amplifier exhibit...

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发表在:	IEEE Journal of solid state circuits 38, 9 (2003).
主要作者:	Urteaga, M.
格式:	文件
语言:	English
主题:	12.0 dB. 140 to 220 GHz. 6.3 dB. 8.5 dB. G-band. HBT amplifiers. InP. InP-based technology. Parasitic collector-base junction capacitance. Scaling. Single-stage amplifier. Small-signal gain. Transferred-substrate technology. Tuned amplifiers.