G-band (140-220-GHz) InP-based HBT amplifiers.

G-band (140-220-GHz) InP-based HBT amplifiers.

We report tuned amplifiers designed for the 140-220-GHz frequency band. The amplifiers were designed in a transferred-substrate InP-based heterojunction bipolar transistor technology that enables efficient scaling of the parasitic collector-base junction capacitance. A single-stage amplifier exhibit...

Fuld beskrivelse

Bibliografiske detaljer
Udgivet i:IEEE Journal of solid state circuits 38, 9 (2003).
Hovedforfatter: Urteaga, M.
Format: Article
Sprog:English
Fag:
12.0 dB.
140 to 220 GHz.
6.3 dB.
8.5 dB.
G-band.
HBT amplifiers.
InP.
InP-based technology.
Parasitic collector-base junction capacitance.
Scaling.
Single-stage amplifier.
Small-signal gain.
Transferred-substrate technology.
Tuned amplifiers.