Direct extraction of an empirical temperature-dependent InGaP

Direct extraction of an empirical temperature-dependent InGaP

A new empirical InGaP/GaAs heterojunction bipolar transistor (HBT) large-signal model including self-heating effects is presented. The model accounts for the inherent temperature dependence of the device characteristics due to ambient-temperature variation as well as self-heating. The model is accom...

Täydet tiedot

Bibliografiset tiedot
Julkaisussa:IEEE Journal of solid state circuits 38, 9 (2003).
Päätekijä: Raghavan, A.
Aineistotyyppi: Artikkeli
Kieli:English
Aiheet:
HBT.
InGaP-GaAs.
InGaP/GaAs.
Ambient-temperature variation.
Average squared-error.
De current-voltage measurements.
Distributed base-collector capacitance.
Empirical temperature-dependent model.
Extraction process.
Forward I-V data.
Harmonic power characteristics.
Large-signal model.
Multibias-point small-signal S-parameter measurements.
Self-heating effects.