Direct extraction of an empirical temperature-dependent InGaP

A new empirical InGaP/GaAs heterojunction bipolar transistor (HBT) large-signal model including self-heating effects is presented. The model accounts for the inherent temperature dependence of the device characteristics due to ambient-temperature variation as well as self-heating. The model is accom...

Полное описание

Библиографические подробности
Опубликовано в::IEEE Journal of solid state circuits 38, 9 (2003).
Главный автор: Raghavan, A.
Формат: Статья
Язык:English
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