Direct extraction of an empirical temperature-dependent InGaP
A new empirical InGaP/GaAs heterojunction bipolar transistor (HBT) large-signal model including self-heating effects is presented. The model accounts for the inherent temperature dependence of the device characteristics due to ambient-temperature variation as well as self-heating. The model is accom...
Опубликовано в:: | IEEE Journal of solid state circuits 38, 9 (2003). |
---|---|
Главный автор: | |
Формат: | Статья |
Язык: | English |
Предметы: |