A high-performance CMOS-SOI antenna switch for the 2.5-5-GHz band.

A high-performance CMOS-SOI antenna switch for the 2.5-5-GHz band.

Taking full advantage of the high resistivity substrate and underlying oxide of silicon-on-insulator (SOI) technology, a high-performance CMOS single-pole double-throw (SPDT) T/R switch for Bluetooth class-II applications has been designed and fabricated in a partially depleted 0.25-μm SOI process....

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Bibliographic Details
Published in:IEEE Journal of solid state circuits 38, 7 (2003).
Main Author: Tinella, C.
Format: Article
Language:English
Subjects:
0.25 micron.
0.7 dB.
1 dB.
1 kohmcm.
2.5 to 5 GHz.
20 ohmcm.
Bluetooth class-II transceiver.
CMOS-SOI antenna switch.
Insertion loss.
Isolation.
Partially-depleted SOI technology.
Single-pole double-throw T/R switch.
Substrate resistivity.