A 300-μW 1.9-GHz CMOS oscillator utilizing micromachined resonators.

A 300-μW 1.9-GHz CMOS oscillator utilizing micromachined resonators.

A low-power low-phase-noise 1.9-GHz RF oscillator is presented. The oscillator employs a single thin-film bulk acoustic wave resonator and was implemented in a standard 0.18-μm CMOS process. This paper addresses design issues involved in codesigning micromachined resonators with CMOS circuitry to re...

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Bibliographic Details
Published in:IEEE Journal of solid state circuits 38, 7 (2003).
Main Author: Otis, B.P
Format: Article
Language:English
Subjects:
0.18 micron.
1 V.
1.9 GHz.
300 muA.
300 muW.
CMOS circuit.
MEMS resonator.
RF transceiver.
Low-power RF oscillator.
Micromachining process.
Phase noise.
Startup time.
Thin-film bulk acoustic wave resonator.