FET circuit model extraction and characterization for monolithic microwave integrated circuit design

The use of Gallium Arsenide field-effect transistors in high frequency applications has been a remarkable advancement in microwave technology. More research and development groups are now giving much attention to the design and fabrication of GaAs FETs for different RF applications. This posts a dem...

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Hlavní autor:	Agustin, Rowelito D.
Další autoři:	Dizon, Raphael Angelo S., Sebastian, Michael James D.
Médium:	Diplomová práce
Jazyk:	English
Vydáno:	2008.
Témata:	Field-effect transistors. Integrated circuits > Design and construction. Microwave integrated circuits > Design and construction. FET circuit model extraction. Monolithic Microwave Integrated Circuits.