FET circuit model extraction and characterization for monolithic microwave integrated circuit design
The use of Gallium Arsenide field-effect transistors in high frequency applications has been a remarkable advancement in microwave technology. More research and development groups are now giving much attention to the design and fabrication of GaAs FETs for different RF applications. This posts a dem...
| المؤلف الرئيسي: | |
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| مؤلفون آخرون: | , |
| التنسيق: | أطروحة |
| اللغة: | English |
| منشور في: |
2008.
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| الموضوعات: |