Arsenic flux dependence of the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures

Arsenic flux dependence of the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures

Dettagli Bibliografici
Autore principale: Patricio, Michelee G.
Natura: Tesi
Lingua:English
Pubblicazione: 2002.
Soggetti:
Modulation-doped field-effect transistors.
Gallium arsenside semiconductors.
Molecular beam epitaxy.
Semiconductor doping.