Arsenic flux dependence of the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures

Arsenic flux dependence of the mobility and junction electric field of modulation-doped GaAs/AlGaAs heterostructures

Библиографические подробности
Главный автор: Patricio, Michelee G.
Формат: Диссертация
Язык:English
Опубликовано: 2002.
Предметы:
Modulation-doped field-effect transistors.
Gallium arsenside semiconductors.
Molecular beam epitaxy.
Semiconductor doping.