Parametric and kinetic study of silicon nitride film deposition on silicon wafer by low pressure chemical vapor deposition (LPCVD) method

Parametric and kinetic study of silicon nitride film deposition on silicon wafer by low pressure chemical vapor deposition (LPCVD) method

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Detalles Bibliográficos
Autor principal: Velasco, Angelito A.
Formato: Tesis
Lenguaje:English
Publicado: 2002.
Materias:
Silicon nitride.
Chemical vapor deposition.
Arrhenius equation.