Parametric and kinetic study of silicon nitride film deposition on silicon wafer by low pressure chemical vapor deposition (LPCVD) method

Parametric and kinetic study of silicon nitride film deposition on silicon wafer by low pressure chemical vapor deposition (LPCVD) method

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Bibliografische gegevens
Hoofdauteur: Velasco, Angelito A.
Formaat: Thesis
Taal:English
Gepubliceerd in: 2002.
Onderwerpen:
Silicon nitride.
Chemical vapor deposition.
Arrhenius equation.