Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Bibliografske podrobnosti
Glavni avtor: Somintac, Armando S.
Format: Thesis
Jezik:English
Izdano: 2001.
Teme:
Molecular beam epitaxy.
Optoelectronic devices.
Gallium arsenide.