Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Sonraí bibleagrafaíochta
Príomhchruthaitheoir: Somintac, Armando S.
Formáid: Tráchtas
Teanga:English
Foilsithe / Cruthaithe: 2001.
Ábhair:
Molecular beam epitaxy.
Optoelectronic devices.
Gallium arsenide.