Growth and characterization of GaAs-based optoelectronic devices grown via molecular beam epitaxy

Detalles Bibliográficos
Autor principal:	Somintac, Armando S.
Formato:	Tesis
Lenguaje:	English
Publicado:	2001.
Materias:	Molecular beam epitaxy. Optoelectronic devices. Gallium arsenide.