X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE)

X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE)

Sonraí bibleagrafaíochta
Príomhchruthaitheoir: Guiao, Luisito C.
Formáid: Tráchtas
Teanga:English
Foilsithe / Cruthaithe: 2001.
Ábhair:
Quantum wells.
Gallium arsenide.
Molecular beam epitaxy.
X-rays > Diffraction.