X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE)

X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE)

Opis bibliograficzny
1. autor: Guiao, Luisito C.
Format: Praca dyplomowa
Język:English
Wydane: 2001.
Hasła przedmiotowe:
Quantum wells.
Gallium arsenide.
Molecular beam epitaxy.
X-rays > Diffraction.