X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE)

X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE)

Bibliografiska uppgifter
Huvudupphovsman: Guiao, Luisito C.
Materialtyp: Lärdomsprov
Språk:English
Publicerad: 2001.
Ämnen:
Quantum wells.
Gallium arsenide.
Molecular beam epitaxy.
X-rays > Diffraction.