X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE)

X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE)

Detalles Bibliográficos
Autor Principal: Guiao, Luisito C.
Formato: Thesis
Idioma:English
Publicado: 2001.
Subjects:
Quantum wells.
Gallium arsenide.
Molecular beam epitaxy.
X-rays > Diffraction.