X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE)

X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE)

Podrobná bibliografie
Hlavní autor: Guiao, Luisito C.
Médium: Diplomová práce
Jazyk:English
Vydáno: 2001.
Témata:
Quantum wells.
Gallium arsenide.
Molecular beam epitaxy.
X-rays > Diffraction.