X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE)

X-ray diffraction investigation of GaAs-based multiple quantum wells grown on on-axis and off-axis substrates via molecular beam epitaxy (MBE)

Detaylı Bibliyografya
Yazar: Guiao, Luisito C.
Materyal Türü: Tez
Dil:English
Baskı/Yayın Bilgisi: 2001.
Konular:
Quantum wells.
Gallium arsenide.
Molecular beam epitaxy.
X-rays > Diffraction.