Investigation on the electron mobility and interface electric field in modulation-doped GaAs/AIGaAs heterostructures
An investigation on the dependence of electron mobility with various scattering mechanisms and measurement of the electric field at the GaAs/AlGaAs interface was carried out to characterize MBE-grown modulation-doped GaAs/AlₓGa₁ ₋ₓAs( x≈0.35) heterostructures. Hall measurement was employed to determ...
| 主要作者: | |
|---|---|
| 格式: | Thesis |
| 語言: | English |
| 出版: |
2001.
|
| 主題: |