Investigation on the electron mobility and interface electric field in modulation-doped GaAs/AIGaAs heterostructures
An investigation on the dependence of electron mobility with various scattering mechanisms and measurement of the electric field at the GaAs/AlGaAs interface was carried out to characterize MBE-grown modulation-doped GaAs/AlₓGa₁ ₋ₓAs( x≈0.35) heterostructures. Hall measurement was employed to determ...
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| Formatua: | Thesis |
| Hizkuntza: | English |
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2001.
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