Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates

Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates

Библиографические подробности
Главный автор: Sarmiento, Raymund Lee Antonio C.
Формат: Диссертация
Язык:English
Опубликовано: 2001.
Предметы:
Gallium arsenide > Spectra.
Molecular beam epitaxy.
Deep level transient spectroscopy.