Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates

Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates

Bibliografski detalji
Glavni autor: Sarmiento, Raymund Lee Antonio C.
Format: Disertacija
Jezik:English
Izdano: 2001.
Teme:
Gallium arsenide > Spectra.
Molecular beam epitaxy.
Deep level transient spectroscopy.