Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates

Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates

Dettagli Bibliografici
Autore principale: Sarmiento, Raymund Lee Antonio C.
Natura: Tesi
Lingua:English
Pubblicazione: 2001.
Soggetti:
Gallium arsenide > Spectra.
Molecular beam epitaxy.
Deep level transient spectroscopy.