Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates

Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates

Detalhes bibliográficos
Autor principal: Sarmiento, Raymund Lee Antonio C.
Formato: Tese
Idioma:English
Publicado em: 2001.
Assuntos:
Gallium arsenide > Spectra.
Molecular beam epitaxy.
Deep level transient spectroscopy.