Sarmiento, R. L. A. C. (2001). Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates.
Chicago Style (17th ed.) CitationSarmiento, Raymund Lee Antonio C. Deep Level Transient Spectroscopy of Gallium Arsenide Grown by Molecular Beam Epitaxy on On-axis (100) and Off-axis Substrates. 2001.
ציטוט MLASarmiento, Raymund Lee Antonio C. Deep Level Transient Spectroscopy of Gallium Arsenide Grown by Molecular Beam Epitaxy on On-axis (100) and Off-axis Substrates. 2001.
אזהרה: ציטוטים אלה לעיתים לא מדויקים ב 100%.