Mathematical modeling of implant dose and characterization of P-N junctions formed by ion shower technology (IST)

Mathematical modeling of implant dose and characterization of P-N junctions formed by ion shower technology (IST)

書目詳細資料
主要作者: Madrid, Pepe L.
格式: Thesis
語言:English
出版: 2000.
主題:
Ion implantation > Mathematical models.
Semiconductor doping > Mathematical models.
Semiconductors > Characterization.