Mathematical modeling of implant dose and characterization of P-N junctions formed by ion shower technology (IST)

Mathematical modeling of implant dose and characterization of P-N junctions formed by ion shower technology (IST)

Библиографические подробности
Главный автор: Madrid, Pepe L.
Формат: Диссертация
Язык:English
Опубликовано: 2000.
Предметы:
Ion implantation > Mathematical models.
Semiconductor doping > Mathematical models.
Semiconductors > Characterization.