Materials aspects of GaAs and InP based structures

Materials aspects of GaAs and InP based structures

Detalhes bibliográficos
Autor principal: Swaminathan, V.
Outros Autores: Macrander, A. T.
Formato: Livro
Idioma:English
Publicado em: Englewood Cliffs, N.J. Prentice Hall c1991.
Assuntos:
Semiconductors > Materials.
Epitaxy.
Gallium arsenide semiconductors.