Style de citation APA (7e éd.)

Seidel, A., & Wicht, B. (2021). Highly integrated gate drivers for Si and GaN power transistors. Springer. https://doi.org/10.1007/978-3-030-68940-7

Style de citation Chicago (17e éd.)

Seidel, Achim, et Bernhard Wicht. Highly Integrated Gate Drivers for Si and GaN Power Transistors. Switzerland: Springer, 2021. https://doi.org/10.1007/978-3-030-68940-7.

Style de citation MLA (9e éd.)

Seidel, Achim, et Bernhard Wicht. Highly Integrated Gate Drivers for Si and GaN Power Transistors. Springer, 2021. https://doi.org/10.1007/978-3-030-68940-7.