Highly integrated gate drivers for Si and GaN power transistors

Highly integrated gate drivers for Si and GaN power transistors

Dades bibliogràfiques
Autors principals: Seidel, Achim (Autor), Wicht, Bernhard (Autor)
Format: Electronic Resource
Idioma:English
Publicat: Switzerland Springer [2021]
Matèries:
Power transistors.
Electronic books.
Accés en línia:https://link-springer-com.ezproxy.engglib.upd.edu.ph/book/10.1007/978-3-030-68940-7
https://doi.org/10.1007/978-3-030-68940-7