Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures

Investigation of the terahertz emission characteristics of MBE-grown GaAs-based nanostructures

Detalhes bibliográficos
Main Authors: Takatori, Satoru (Author), Minh, Pham Hong (Author), Estacio, Elmer (Author), Cadatal-Raduban, Marilou (Author), Nakazato, Tomoharu (Author), Shimizu, Toshihiko (Author), Bailon-Somintac, Michelle (Author), Somintac, Armando (Author), Defensor, Michael (Author), Gabayno, Jacqueline (Author), Awitan, Fritz Christian B. (Author), Jaculbia, Rafael B. (Author), Garcia, Alipio (Author), Ponseca, Carlito Jr (Author), Salvador, Arnel (Author)
Formato: Analytics
Idioma:English
Publicado em: 2010.
Assuntos:
Terahertz.
Semiconductor.
Quantum dot.
Modulation-doped heterostructure.