Etch-stop mechanisms in plasma-assisted atomic layer etching of silicon nitride: a molecular dynamics study

Etch-stop mechanisms in plasma-assisted atomic layer etching of silicon nitride: a molecular dynamics study

Dettagli Bibliografici
Autore principale: Tercero, Jomar U. (Autore)
Altri autori: Vasquez, Magdaleno R. Jr (adviser.), Hamaguchi, Satoshi (co-adviser.)
Natura: Tesi
Lingua:English
Pubblicazione: Quezon City College of Engineering, University of the Philippines Diliman 2021.
Soggetti:
Molecular dynamics simulations.
Silicon nitride.
Accesso online:Abstract