Etch-stop mechanisms in plasma-assisted atomic layer etching of silicon nitride: a molecular dynamics study

Etch-stop mechanisms in plasma-assisted atomic layer etching of silicon nitride: a molecular dynamics study

Dades bibliogràfiques
Autor principal: Tercero, Jomar U. (Autor)
Altres autors: Vasquez, Magdaleno R. Jr (adviser.), Hamaguchi, Satoshi (co-adviser.)
Format: Thesis
Idioma:English
Publicat: Quezon City College of Engineering, University of the Philippines Diliman 2021.
Matèries:
Molecular dynamics simulations.
Silicon nitride.
Accés en línia:Abstract