Mostra 71 - 80 risultati di 108 ricerca 'IEEE Transactions on electron devices', tempo di risposta: 0,03s Raffina i risultati
  1. 71

    Snubberless voltage sharing of series-connected insulated-gate devices by a novel gate control strategy. di Belverde, G.

    Articolo

    Snubberless voltage sharing of series-connected insulated-gate devices by a novel gate control strategy.
  2. 72

    Low-power scan design using first-level supply gating. di Bhunia, S.

    Articolo

    Low-power scan design using first-level supply gating.
  3. 73

    A hybrid Nb di Wong, A.

    Articolo

    A hybrid Nb
  4. 74

    System simulation of mixed-signal multi-domain microsystems with piecewise linear models. di Levitan, S.P

    Articolo

    System simulation of mixed-signal multi-domain microsystems with piecewise linear models.
  5. 75

    A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors. di Anwar, A.F.M

    Articolo

    A self-consistent model for temperature and current distribution in abrupt heterojunction bipolar transistors.
  6. 76

    Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects. di Bufler, F.M

    Articolo

    Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects.
  7. 77

    Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs. di Mitani, Y.

    Articolo

    Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs.
  8. 78

    The origins of leaky characteristics of Schottky diodes on p-GaN. di Yu, L.S

    Articolo

    The origins of leaky characteristics of Schottky diodes on p-GaN.
  9. 79

    Monte Carlo simulation and measurement of nanoscale n-MOSFETs. di Bufler, F.M

    Articolo

    Monte Carlo simulation and measurement of nanoscale n-MOSFETs.
  10. 80

    Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy di Singh, D.V

    Articolo

    Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy

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