Отображение 11 - 20 результаты of 108 для поиска 'IEEE Transactions on electron devices', время запроса: 0.03сек. Отмена результатов
  1. 11

    Operating principles and performance of a novel a-Si H p-i-n-based X-ray detector for medical image applications. по Sen-Shyong Fann

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    Operating principles and performance of a novel a-Si H p-i-n-based X-ray detector for medical image applications.
  2. 12

    The effects of nonlocal impact ionization on the speed of avalanche photodiodes. по Hambleton, P.J

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    The effects of nonlocal impact ionization on the speed of avalanche photodiodes.
  3. 13

    UV-responsive CCD image sensors with enhanced inorganic phosphor coatings. по Franks, W.A.R

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    UV-responsive CCD image sensors with enhanced inorganic phosphor coatings.
  4. 14

    Improvement of color temperature using independent control of red, green, blue luminance in AC plasma display panel. по Ki-Duck Cho

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    Improvement of color temperature using independent control of red, green, blue luminance in AC plasma display panel.
  5. 15

    Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP Fabry-Perot multiple-quantum-well laser diodes. по Palenskis, V.

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP Fabry-Perot multiple-quantum-well laser diodes.
  6. 16

    Hot-hole-induced dielectric breakdown in LDMOS transistors. по Labate, L.

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    Hot-hole-induced dielectric breakdown in LDMOS transistors.
  7. 17

    A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing. по Jongdae Kim

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing.
  8. 18

    Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing. по Onishi, K.

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing.
  9. 19

    Threshold voltage-related soft error degradation in a TFT SRAM cell. по Ikeda, S.

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    Threshold voltage-related soft error degradation in a TFT SRAM cell.
  10. 20

    Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-μm CMOS process. по Ming-Dou Ker

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    Substrate-triggered SCR device for on-chip ESD protection in fully silicided sub-0.25-μm CMOS process.

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