Zobrazuji výsledky 1 - 10 z 108 pro vyhledávání 'IEEE Transactions on electron devices', doba hledání: 0,03 s. Upřesnit hledání
  1. 1

    IEEE transactions on electron devices.

    Vydáno 2002
    Kniha

    IEEE transactions on electron devices.
  2. 2

    IEEE Transactions on electron devices.

    Available for University of the Philippines Diliman via IEEE Xplore Digital Library . Click here toaccess
    Continuing Resource

    IEEE Transactions on electron devices.
  3. 3

    Critical current characteristics of YBa2Cu3O 7 thin films on (110) SrTiO3. Autor Cukauskas, E.J

    Článek

    Critical current characteristics of YBa2Cu3O 7 thin films on (110) SrTiO3.
  4. 4

    Possibility of Nd1.9Ba1.1Cu3O7+δ and Pr1.14Ba1.86Cu3O7-δ single crystals for insulator in high-speed superconducting circuits. Autor Saba, F.M

    Článek

    Possibility of Nd1.9Ba1.1Cu3O7+δ and Pr1.14Ba1.86Cu3O7-δ single crystals for insulator in high-speed superconducting circuits.
  5. 5

    Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity. Autor Sghaier, N.

    Článek

    Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity.
  6. 6

    Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation. Autor Ming-Kwen Tsai

    Článek

    Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation.
  7. 7

    Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure. Autor Sawada, K.

    Článek

    Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure.
  8. 8

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. Autor Tsung-Hsing Yu

    Článek

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model.
  9. 9

    Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. Autor Meneghesso, G.

    Článek

    Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs.
  10. 10

    Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. Autor Nieh, R.E

    Článek

    Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing.

Vyhledávací nástroje: