Showing 1 - 10 results of 108 for search 'IEEE Transactions on electron devices', Forespørselstid: 0.03s Refine Results
  1. 1

    IEEE transactions on electron devices.

    Udgivet 2002
    Bog

    IEEE transactions on electron devices.
  2. 2

    IEEE Transactions on electron devices.

    Available for University of the Philippines Diliman via IEEE Xplore Digital Library . Click here toaccess
    Continuing Resource

    IEEE Transactions on electron devices.
  3. 3

    Critical current characteristics of YBa2Cu3O 7 thin films on (110) SrTiO3. af Cukauskas, E.J

    Article

    Critical current characteristics of YBa2Cu3O 7 thin films on (110) SrTiO3.
  4. 4

    Possibility of Nd1.9Ba1.1Cu3O7+δ and Pr1.14Ba1.86Cu3O7-δ single crystals for insulator in high-speed superconducting circuits. af Saba, F.M

    Article

    Possibility of Nd1.9Ba1.1Cu3O7+δ and Pr1.14Ba1.86Cu3O7-δ single crystals for insulator in high-speed superconducting circuits.
  5. 5

    Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity. af Sghaier, N.

    Article

    Study of trapping phenomenon in 4H-SiC MESFETs dependence on substrate purity.
  6. 6

    Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation. af Ming-Kwen Tsai

    Article

    Improvements in direct-current characteristics of Al0.45Ga0.55As-GaAs digital-graded superlattice-emitter HBTs with reduced turn-on voltage by wet oxidation.
  7. 7

    Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure. af Sawada, K.

    Article

    Elimination of kink phenomena and drain current hysteresis in InP-based HEMTs with a direct ohmic structure.
  8. 8

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. af Tsung-Hsing Yu

    Article

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model.
  9. 9

    Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs. af Meneghesso, G.

    Article

    Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs.
  10. 10

    Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. af Nieh, R.E

    Article

    Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing.

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