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2471

Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy by Singh, D.V

Published in IEEE Transactions on electron devices

Article

Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy

2472

Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack its tradeoff with gate capacitance. by Yang-Yu Fan

Published in IEEE Transactions on electron devices

Article

Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack its tradeoff with gate capacitance.

2473

Impact-ionization-assisted intermediate band solar cell. by Luque, A.

Published in IEEE Transactions on electron devices

Article

Impact-ionization-assisted intermediate band solar cell.

2474

Development of high-current 4H-SiC ACCUFET. by Singh, R.

Published in IEEE Transactions on electron devices

Article

Development of high-current 4H-SiC ACCUFET.

2475

Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon. by Holland, S.E

Published in IEEE Transactions on electron devices

Article

Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon.

2476

Diagnosing Old MI by Searching for a Linear Boundary in the Space of Principal Components. by Donnelly, M.P

Published in IEEE Transactions on information technology in biomedicine

Article

Diagnosing Old MI by Searching for a Linear Boundary in the Space of Principal Components.

2477

Insulation co-ordination for gas-insulated transmission lines (GIL). by Volcker, O.

Published in IEEE Transactions on power delivery

Article

Insulation co-ordination for gas-insulated transmission lines (GIL).

2478

The silicon p-n-p-n switch and controlled rectifier (thyristor). by Holonyak, N., Jr

Published in IEEE Transactions on power electronics

Article

The silicon p-n-p-n switch and controlled rectifier (thyristor).

2479

A 4-kB 500-MHz 4-T CMOS SRAM using low-VTHN bitline drivers and high-VTHP latches. by Chua-Chin Wang

Published in IEEE Transactions on VLSI systems

Article

A 4-kB 500-MHz 4-T CMOS SRAM using low-VTHN bitline drivers and high-VTHP latches.

2480

Multiple-symbol parallel decoding for variable length codes. by Nikara, J.

Published in IEEE Transactions on VLSI systems

Article

Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy by Singh, D.V

Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack its tradeoff with gate capacitance. by Yang-Yu Fan

Impact-ionization-assisted intermediate band solar cell. by Luque, A.

Development of high-current 4H-SiC ACCUFET. by Singh, R.

Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon. by Holland, S.E

Diagnosing Old MI by Searching for a Linear Boundary in the Space of Principal Components. by Donnelly, M.P

Insulation co-ordination for gas-insulated transmission lines (GIL). by Volcker, O.

The silicon p-n-p-n switch and controlled rectifier (thyristor). by Holonyak, N., Jr

A 4-kB 500-MHz 4-T CMOS SRAM using low-VTHN bitline drivers and high-VTHP latches. by Chua-Chin Wang

Multiple-symbol parallel decoding for variable length codes. by Nikara, J.

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