Εμφανίζονται 2.361 - 2.370 Αποτελέσματα από 2.512 για την αναζήτηση '"n."', χρόνος αναζήτησης: 0,04δλ Περιορισμός αποτελεσμάτων
  1. 2361

    A 1-MHZ bandwidth 3.6-GHz 0.18-μm CMOS fractional-N synthesizer utilizing a hybrid PFD ανά Meninger, S.E

    Τόπος έκδοσης IEEE Journal of solid state circuits
    Άρθρο

    A 1-MHZ bandwidth 3.6-GHz 0.18-μm CMOS fractional-N synthesizer utilizing a hybrid PFD
  2. 2362

    On the message and time complexity of protocols for reliable broadcasts ανά Hong-Yi Tzeng

    Άρθρο

    On the message and time complexity of protocols for reliable broadcasts
  3. 2363

    The effect of bandwidth allocation policies on delay in unidirectional bus networks. ανά Manjunath, D.

    Άρθρο

    The effect of bandwidth allocation policies on delay in unidirectional bus networks.
  4. 2364

    Schön shown the door [electronics research investigation]. ανά Hellemans, A.

    Τόπος έκδοσης IEEE spectrum
    Άρθρο

    Schön shown the door [electronics research investigation].
  5. 2365

    Control-on-demand an efficient approach to router programmability. ανά Hjalmtysson, G.

    Άρθρο

    Control-on-demand an efficient approach to router programmability.
  6. 2366

    The toughest transistor yet [GaN transistors]. ανά Eastman, L.F

    Τόπος έκδοσης IEEE spectrum
    Άρθρο

    The toughest transistor yet [GaN transistors].
  7. 2367

    An electronically switchable leaky wave antenna. ανά Limin Huang

    Άρθρο

    An electronically switchable leaky wave antenna.
  8. 2368

    Earth day gadgets (Part II). IN IT matters [column]. ανά Amadora, Len

    Τόπος έκδοσης Manila bulletin
    Άρθρο

    Earth day gadgets (Part II). IN IT matters [column].
  9. 2369

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model. ανά Tsung-Hsing Yu

    Τόπος έκδοσης IEEE Transactions on electron devices
    Άρθρο

    Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model.
  10. 2370

    Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing. ανά Nieh, R.E

    Τόπος έκδοσης IEEE Transactions on electron devices
    Άρθρο

    Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing.

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