Отображение 1 - 3 результаты of 3 для поиска '"ZrO2."', время запроса: 0.01сек. Отмена результатов
  1. 1

    Electrical properties of metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using the polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE))/ZrO2 по Lee, Gwang-Geun

    Опубликовано в: Journal of the Ceramic Society of Japan
    Статья

    Electrical properties of metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using the polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE))/ZrO2
  2. 2

    Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide. по Dong-Won Kim

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide.
  3. 3

    Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack its tradeoff with gate capacitance. по Yang-Yu Fan

    Опубликовано в: IEEE Transactions on electron devices
    Статья

    Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack its tradeoff with gate capacitance.

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